Date: 28th November 2013
Unterhaching, Germany, 28th November 2013 – The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Installed at the module level it negates the limitations of the SiC MOSFET. The module behaves in inverter applications in the same way as in a boost circuit. This makes it possible to achieve better performance and efficiency than with a SiC JFET or SiC BJT – and enjoy the added advantage of MOSFET technology’s simple gate drive circuit.
For more information please see Vincotech’s article “SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior” under:
Vincotech – an affiliated company within the Mitsubishi Electric Corporation – develops and manufactures subsystems and electronic components and provides manufacturing services that help customers master complex challenges in electronics integration. Vincotech’s extensive portfolio encompasses standard and tailored solutions, engineering services, and technical support for customers worldwide. These products and services contribute to sustainable, environmentally sound solutions that help modern society embrace mega-trends and explore new avenues.
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For further information please contact:
Michael Frisch, Technical Marketing, Vincotech GmbH, michael.frisch[at]vincotech[dot]com, +49 89 878067-142